Magnetoresistance fluctuations in shortn-type Si/SiGe heterostructure wires
نویسندگان
چکیده
منابع مشابه
Negative Magnetoresistance in Amorphous Indium Oxide Wires
We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equa...
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Linear magnetoresistance in n-type silicon due to doping density fluctuations
We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×10(15) cm(-3), and report measurements of it in the temperature range 30-200 K. It arises from the deformation of current paths, which causes a part of the Hall field to be detected at the voltage probes. In short, wide samples we...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2000
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.61.7545